Diode operation(3)

You statement really doesn't make any sense. Where are you digging up these wild concepts?  I'm still waiting for a reference to Shackley's Law of Transistors.

Non-Valence electrons are free to drift and diffuse in a semiconductor lattice.  And the motion of holes is actually electron motion as well.  Electrons don't have ID badges or birth certificates.

electrons do have different energies in case there are semiconductors electrons or n-type semiconductor electrons

let me give you an example

we have a diode and a voltage source of 0.4V





the electrons in zone 1 repel the electrons in zone 2

the total positive charge attracts the electrons in zone 2

the  force1 is attractive using Coulomb's law 2*positivecharge*zone2negativecharge/distance^2-zone1negativecharge*zone2negativechatge/distance^2

we consider distances even because there is little difference

when we apply voltage over 0.4V the force created by the electrical is bigger than force1 so those electrons start flowing

because the depletion zone is reduced the diffusion field overcome the weakened electrical field and electrons diffuse from n-type to p-type region

because outside voltage is not enough to provide enough energy for electrons in the semiconductor to overcome the band energy gap

silicon acts as an insulator reducing though the current flowing

the electric field now has become a potential barrier of 0.3V

in zero bias mode the diffusion field is 0.7V so the total net current would be 0

the electrons from the n-type to the p-type side flow with energy equal to (0.7-0.3)*q

but the electrons in the potential barrier are moving with energy equal to (0.4-0.3)*q

so there is a difference in energy levels